Abstract
The applications of Indium tin oxide (ITO) films on the texture single crystalline p?type silicon were investigated. The ITO films were reactively sputtered from an oxide ceramic target 90 wt% In2O3 and 10 wt% SnO2 in O2, RF power 100 watt, the substrate temperature 100℃ and the base pressure is 3x10?3 Torr. The ITO film serves not only as an antireflection coating but also an electrons transport layer for the solar cells. The comparison between the ITO ARC solar cell and the SiNx ARC solar cell was also made. The solar cell with ITO ARC shows a significant higher short circuit current (Jsc) and Fill Factor (FF) compared to the one with SiNx ARC. Due to the electrons transport length is decreased, it results in lower series resistance (Rs) and electrons recombination probability as well as enhances the collection of the light generated carriers. At the optimal condition and without BSF, the conversion efficiency of the ITO ARC solar cell is achieved to 16.56%.