Abstract
A high fill-factor self-buffered active pixel sensor and a tunable injection current compensation architecture for high dynamic range imager is proposed for scaled standard CMOS technology. The new cell including a photo diode formed by n-well and p-type substrate and an one-transistor output buffer shows better performance than conventional APS. Novel imager can achieve fill-factor of 55%, sensitivity of 3.4V/sec-lux, and large output swing 2.2V at VDD=3.3V for 0.25μm CMOS technology. Tunable injection current compensation architecture can improve dynamic range by as much as 40dB and can be tailored design to meet various application specifications. Dynamic range of up to 120dB is projected by simulation results. Experimental results of the new structure and simulated design of the circuit are discussed in this thesis.