Abstract
As progress of IC fabrication technology, the device size was scaling down gradually. According to the prediction of ITRS (International Technology Roadmap for Semiconductors Conference) of 2006, lithography technologies below 32nm includes EUV, innovative 193nm immersion with water, imprint and ML2 methods. The imprint lithography technology has simple process, low cost, and high throughput and has potential in IC process. The key points of UV nanoimprint lithograph include mold fabrication, material of photoresist, process of imprinting and etching. First at all, in order to cost down, we fabricated HSQ/ITO/Glass mould to substitute for conventional quartz. And using e-beam lithography with low dose (360□C/cm2) to define patterns. An HSQ film developed by TMAH concentration is 6% and etch time is 10sec. The heat cycle included soft bake and hardback at step-like temperature controlled with various time intervals. UV mold with various width/space=1：10 for line width 70nm were fabricated. For UV nanoimprint, we coated release layer (F13-TCS) on HSQ mold. Then, we succeed to transfer HSQ patterns on PR (PAK-01-200) which is effected by UV wavelength 300 ~ 370 nm at room temperature with the imprint pressure is 595?870 bar and imprint time is 2 ~ 20 min. The SEM was then taken to observe the transferred patterns. The optimum condition can be chose. Secondly, we use the above optimum imprint condition to continue the RIE experiment for further development of lift-off technique. SEM was taken to observe the patterns after RIE process. Aluminum was then evaporated on the substrate. From SEM pictures, Aluminum nano wires with the line width and height, 140 nm and 56 nm, were performed.