Abstract
Today, the application of the large data storage equipment has been widely used which lead to the increased importance of the NAND flash memory. With the smallest cell area in the planar semiconductor memory, NAND Flash memory can achieve high cell density and low cost. Even though the NAND flash memory has a lot of benefits, the process shrinking has reduced to 20nm. It has become more difficult to increase the array density and the increasing of the cost is also unacceptable. To make the both applicable, many kinds of 3D NAND flash memory structure are proposed. But the technology of the 3D NAND flash is not good enough that there are still many issues to conquer during the chip manufacturing and etching. It will cause many defect in the cell array. To improve to error and the efficient reduction due to these reason, the large ECC tolerance bit is applied. But this method also cause the program verification efficiency reduction due to the conventional Binary Search Fail Bit Detector. To solve this problem, we propose the Wave Propagation Fail Bit Detector apply in 0.4um which can improve the program verification fail bit detecting operation cycle significantly. It cans reduce the operation cycles in 13 times to the conventional Binary Search Fail Bit Detector scheme in the 64k bit page size.