Abstract
Grazing incidence small angle X-ray scattering (GISAXS) and X-ray diffraction technique were used to probe the particle size and distribution of MoSi2 in a Mo ion implanted Si(100) wafer under 800 ºC after different annealing time. The sheet resistance of the sample decreases at beginning of annealing due to the recovery of defects and then increases due to the growth of larger and separated particles. The particle size of MoSi2 grows linearly proportional to the annealing time is due to interfacial reaction controlled growth kinetics.