Abstract
As device scales down, some constraints must be overcome. Straddle-gate transistor is not limited by the source/drain extension region and leads another path to smaller devices. A comprehensive investigation of the transistor characteristics of Straddle-gate structure is presented in this work, which allows a better understanding and optimization of the straddle-gate transistors. Using the careful analysis of these characteristics, sub-100nm length straddle-gate transistors can be optimized with various structure variables, such as spacer width and side dielectric thickness. The straddle-gate transistor is shown to exert much better control on the channel than the control device with the same effective channel length, which leads to a significant improvement in off current characteristics.