Abstract
Semiconducting nanoscale structures, especially one dimensional nanomaterials offer unique and novel electronic and optical properties, and have been applied in many optoelectronic nanodevice. There have been reported that pure β-Ga2O3 reveals an excellent insulator from the I-V measurement at room temperature due to the wide band gap feature in our group study. Under no laser illumination, the same phenomenon was observed form I-V measurement of gold-peapodded Ga2O3 nanowires. But noble-metal nanoparticles encapsulated in a dielectric matrix have attracted interest owing to their unusual optical and electrical properties. The novel metal-insulator heterostructure of gold-peapodded Ga2O3 nanowires, formed by the reaction of gold, gallium, and silica at 800℃, is successfully achieved by a simple thermal annealing process. Due to the surface-plasmon-resonance (SPR) effects of gold nanoparticles embedded in the dielectric matrix, the photo-response behavior of gold-peapodded Ga2O3 nanowires was characterized by using a double frequency Nd:YAG laser (Laser century Technology, model GL532T) with wavelength of 532 nm and 632nm under atmosphere and room-temperature conditions. In addition, the novel photo-switch of gold-peapodded nanowires in present study demonstrates the promising building blocks to perform the future optoelectronic devices in next generation semiconductor industry. From the room-temperature photoluminescence spectra of gold-peapodded Ga2O3 nanowires, it is noteworthy that the broad and strong red-orange emission centered at wavelength of 600nm. And the light source shows the vivid red-orange color was observed by the naked eye. Such phenomenon is first observed in our study and it supposes that the vivid light source is ascribed the interface bonding of the gold particles and β-Ga2O3 nanostructure