Abstract
At first, we tried to optimize the growth condition of Au-Ga2O3 core-shell nanowires with 150 nm Au particles under the reaction temperature of 800℃ and the pressure of 1×10-2 torr. Afterwards, we used SEM, XRD, TEM to analyze the surface morphology, crystalline structure and the composition of pure Ga2O3 nanowires and Au-Ga2O3 core-shell nanowires. Besides, we fabricated the nanodevices by the optical microscope equipped with manipulator and a series of standard electron beam lithography (EBL) techniques. Finally, we measured the I-V characteristics and resistive switching behaviors of the pure and core-shell Ga2O3 nanowires in Keithley 4200. We also designed nanodevices with different electrode distances and diameters to discuss the characteristics.