Abstract
Abstract The effect of a thin interlayer of W or Ta on the stability of NiSi film on Si(100) substrates has been investigated. Without the thin interlayer, the process window of NiSi is 350~750℃. Ta or W addition was found to retard significantly the formation of Ni2Si and NiSi. Nevertheless, the formation temperature of NiSi2 does not increase. When NiSi was detectable by X-ray diffraction, W or Ta element was distributed on the upper portion of the film by AES. The process window of Ni2Si and NiSi were dependent on the thickness of W or Ta. Increasing the thickness of W or Ta delayed the Ni2Si and NiSi formation. In Ni/W/Si or Ni/Ta/W system, epitaxial NiSi2 film formed. From the result of X-ray diffraction and HRTEM, There is sufficient evidence to prove that Ni/W/Si or Ni/Ta/W system annealed at 900℃ forming an epitaxial NiSi2 film is better than those without W or Ta interlayer. The good texture of epitaxial NiSi2 film formation depends on the interlayer of W or Ta as a diffusion barrier.