Abstract
In the IC process, the residual contaminant is extremely harmful to our device characteristic, especially the effect of metal contaminant to the initial dielectric breakdown of silicon oxide layer. In this study we use the method of neutron activation analysis (NAA) to find out the content of metal contaminant include nickel copper calcium iron zinc in the silicon chip. Then we use Compton suppression system to measure the medium-low activity radiation source with accuracy and in our experiment we can know the limit of the system. In this research, we combine semiconductor process, nuclear electronics and NAA technology to measure the content of metal contaminant in the silicon chip, this provide a newer and more accurate research for contaminant analysis.