Abstract
By using atomic force microscopy (AFM), we investigated the AFM-induced anodic oxidation on HfO2/Si(100) and TiN/Si(100) surfaces. The heights of oxide pattern are dependent on magnitude and duration of voltage pulse. We also compared the wet etching properties of oxide patterns in diluted HF aqueous solution. Our experimental results show that height of oxide patterns has qualitative properties with pulse voltage and duration. Etching rates of oxide patterns on HfO2 surface are not the same between different oxide heights. The etching rate of AFM-induced oxide of HfO2 film, which is post-annealed at 650oC, is related to its height. After fabricating oxides on TiN surface, we measured adhesion forces on oxidized and non-oxidized regions by force-distance curves. The force-distance curve experiments (measurements of capillary force) are also carried out on ultraviolet-irradiated and annealed AFM-induced oxides on TiN films.