Abstract
Transition-metal Dichalcogenides (TMDCs) is a category of layered material whose monolayer is stable in ambient and with diverse conducting properties from insulator to superconductor. Among the TMDCs, semiconducting ones are the most intriguing, such as P-type WSe2 and N-type MoS2. The inherent doping and the thickness of monolayer could down to 0.7 nm which is promising to be the channel candidate of next node. We focused on CVD WSe2 and adopted Transmission Line Model (TLM) and 4 port measurement to analysis WSe2 thin film quality and its metal contact properties. Utilizing simulation results and data from aforementioned TLM to set up our experiment. We composed contact area pattering and different contact metal to confirm our predictions. The intuitively predicted Schottky barrier height by Schottky Mott Rule is no more held. We obtained remarkable enhancement in the case of dot patterned WSe2 along with Cr/Au contact. Maximum current recorded 1.1 µA/µm and mobility equaled to 3.4 cm2/V· s. The current increased by 120 times and best mobility improved by 10 times both compared to pristine WSe2 with same contact metal.