Abstract
Transition-metal Dichalcogenide（s TMDCs）,which ranges frommetal to semiconductor, is a kind of novel 2D materials. Tungsten Diselenide(WSe2) is a model of the 2D semiconductor. The monolayer WSe2 has a direct bandgap, which is suitable large about 1.6 eV. As we all known that the surface of ideal monolayer WSe2 with lone electron pairs does not have dangling bond. Thus, the Fermi level pinning effect of ideal WSe2 is not very strong and the metalsemiconductor source drain contact of the WSe2 MOSFET decreases the short channel effect rapidly. Due to the lack of effcient doping methord of WSe2, it is diffcult to make the contact of WSe2 FET, which limits the performance of the transistor. In this experiment, We use the CVD methord to grow the monolayer WSe2 single crystal, whose domain size is about 50 m. Then we use UV Ozone thermal oxiadation methord to creat controlable defects on WSe2 single crystal artificially and we also dope WSe2 with various kinds of metal atoms. Finaly, We use DFT methord to calculate the band diagram of the metal atom doped monolayer WSe2. I