Abstract
In this research, we used chemical vapor deposition to synthesize large area monolayer MoS2, then we fabricated MoS2 FET and measured its electrical properties and photodetection. MoS2 has excellent electrical properties: our device could reach 12.5 cm2/Vs mobility, 104 to 105 on/off current ratio. In photodetection of MoS2 FET, our device took 7.6 second to reach 70% of saturation photocurrent, 25 second to decay. And under 1V drain voltage, 10.5V gate voltage, the responsivity of our device was 392.55A/W.