Abstract
Since graphene was discovered, researches on two-dimensional materials has attracted a great deal of attention. Among them, transition metal dichalcogenides (TMD) semiconductors seem to be candidates for diverse applications of optoelectronic and sensors, due to their unique properties of direct bandgap, high mobility and high on/off ratio. As devices scaling down, properties of materials are significantly affected by intrinsic defects, atomic-resolved analysis thus becomes critical issues. In this work, Moire ́ pattern resulted from different stacking of two-dimensional TMD materials has been emphasized. Monolayer TMD has been successfully transferred to the substrate (HOPG) by water-mediated transferring technique and analyzed with Scanning Tunneling Microscope (STM), for further characterization of the atomic structures and defects within materials. Using the model of vector relation in reciprocal space, we combined the theoretical results with experimental results to calculate the relation between the periods acquired from Moire ́ pattern and misorientation angle of vertical-stacked heterostructure.