Abstract
內部光激發原理已廣泛應用在紅外線偵測器上，如應用在３到５微米的鉑矽化合物╱ｐ型矽、８到１２微米的銥矽化合物╱ｐ型矽、和８到１２微米的ｐ＋型矽鍺化合物╱ｐ型矽。在理論方面，有許多人利用三維空間的電子行為，來描述蕭特基光二極體之矽化物中的光激發載子越過蕭特基能障的比率（光產率）。紅外線偵測器的主要效率參數量子效率（即光產率和光吸收的乘積）亦可由理論預測之。但在常見的蕭特基紅外線元件中，產生光激發載子之矽化物的厚度一般只有數十或數百埃。在此種厚度下，載子行為應在二維空間考慮之。本論文係以建立在能量守恆與動量守恆的二維量子理論，來討論鉑矽化合物╱ｐ型矽與ｐ＋型矽鍺化合物╱ｐ型矽兩種不同的紅外線元件之光產率，並與文獻上的數據作比較。這兩種紅外線二極體分別為傳導帶與價帶光激發機構，本論文發展出此兩種光激發機構的二維量子理論，並探討兩種光激發機構間的差異，以及ｐ＋型矽鍺化合物╱ｐ型矽光二極體比鉑矽化合物╱ｐ型矽具有較高的光產率的原因。Internal photoemission infrared detectors have been widelyused, such as PtSi/p-Si for the 3-5 um range, IrSi /p-Si forthe 8-12 um range, as well as p+-SiGe/p-Si for 8-12 um range.Many models based on 3-dimensional concepts have been appliedto explainning the transportation behavior of photoexcitedcarriers and characteristics of quantum efficiency. However,the thicknesses of the active layers of Schottky-barrierinfrared photodiodes are in the order of several tens orseveral hundred angstroms. A 2-dimensional concept instead ofthe 3-dimensional one should be applied to describing thebehavior of photoexcited carriers. Energy conservation andparallel conservation are the main points of the 2-dimensionalmodel. The 2-dimensional model can be seperated into twogroups: conduction band internal photoemission for PtSi/p-Siand valence band internal photoemission for p+-SiGe/p-Si.Simulation results show good agreement with the experimentaldata. Comparison between conduction band internalphotoemission and valence band internal photoemission is alsomade.