Abstract
The parameter measurements of CMOS image active sensor are fundamental for the performance optimization of CMOS APS. However, most critical parameters of a APS, such as capacitance and dark current, are difficult to measure directly. A simple method based on CBCM for measuring the capacitance of CMOS active image sensor has been proposed. Samples fabricated by 0.35μm standard CMOS process are designed and measured. Using the extracted capacitance value from this CBCM technique, the quantum efficiency and dark current of CMOS APS can be accurately predicted .The proposed methods for parameters extraction in a CMOS APS are proven to provide high accuracy without the need of large-area test patterns.