Abstract
As the progress of electrical products, the traditional memories can’t match these products anymore. Therefore, many the new generation memory device candidates are proposed, and resistive random access memory (RRAM) is one of them. The advantages of RRAM are simple structure, fast switching speed, low voltage operation, and easy for CMOS integration. In our research, we present ZrTiOx (ZTO) thin film in metal/insulator/metal (MIM) structured RRAM because ZTO contains the merits of ZrOx and TiO2. There are two experiment topics in the research: 1. The impact of dielectric on ZTO-based RRAM, 2. The impact of electrode materials on ZTO-based RRAM. As our experiment results, we found that the properties of crystalline ZTO RRAM was worse than amorphous ZTO RRAM in topic 1. To short, ZTO is not good to crystallize in RRAM process. In topic 2, we found that the concentration of oxygen vacancies in dielectric is the point of resistance switching. Furthermore, the other important thing is the cooperation between dielectric and electrode, since it will affect the concentration of oxygen vacancies in the dielectric. Finally, the structure of Ni/ZTO/TaN/SiO2/Si shows the best properties in all samples. Because of the mechanism of RRAM is not clearly presently, we especially emphasize the discussion of the mechanism of ZTO RRAM in our research.