Abstract
The current mainstream of semiconductor manufacturing uses silicon wafer as a fundamental material with the needed electronic components build on the surface by several hundred steps of integrated circuits manufacturing process include wafer oxide layer growth, lithography, etching, cleaning, impurity diffusion, ion implantation, thin film deposition and mechanical polishing, etc. Ion implantation is a process that implants ion beam into wafer surface by accelerating high-voltage. The electron beam conditions are very widely depending on machines and operators. Shortage of energy of the electron beam will impact on overall equipment effectiveness and productivity. This study aims to maximize efficiency of tune beam conditions by constructing hierarchical structure factors according to UNISON decision framework, and clarify the improvement opportunities through DEA(Data Envelopment Analysis) approach. An empirical study was conducted in a semiconductor manufacturing company for validation. The results have shown the validity of the proposed framework that can assist decision makers to fine-tune the tune beam parameters and modify the dispatching rules, and calibrate the difference of beam path for each tool to improve the tune beam efficiency and enhance the productivity.