Abstract
Over 85% of the solar cells currently produced are based on crystalline silicon wafers. The ef?ciency of silicon solar cells is signi?cantly affected by electronic recombination losses at the wafer surfaces. A surface passivation layer can be used to reduce electronic recombination losses. In this study, we used Atomic Layer chemical Deposition (ALD) to deposit high-k material as a passivation layer. At first we deposited different high-k materials on c-Si solar cells. We tried different passivation conditions, such as without high-k passivation, with Al2O3 in the front side, with Al2O3 on both sides, and with HfO2 on both sides. The result showed that cell with HfO2 on both sides achieved the highest efficiency of 15.542%. We also deposited HfO2 on HIT solar cells as surface passivation layer. Different passivation conditions such as without HfO2 passivation, with HfO2 on IP side, with HfO2 on IN side, and with HfO2 on both sides are used. HIT solar cell having passivation with HfO2 (8A) on both sides achieved the highest efficiency. The highest efficiency obtained for HIT cell with HfO2 passivation was 11.68%, with a Voc of 0.61 V, Jsc of 31.276 mA/cm2 and FF of 0.612.