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以Patterson法及全像法轉換電子繞射圖形直接成像表面原子結構
Thesis

以Patterson法及全像法轉換電子繞射圖形直接成像表面原子結構

張振義
Masters, National Tsing Hua University
1998

Abstract

低能電子繞射表面結構全像術菊池電子全像術帕得森矽表面結構直接法 low energy electron diffractionsurface structureholographyKikuchi electron holographypattersonSi surfacedirect method
A Patterson-like scheme is proposed for direct inversion of the conventional low energy electron diffraction (LEED) intensity versus energy I(E) curves, which is in contrast with the previously suggested holographic scheme. The surface sensitivity is guaranteed by using the fractional-order beams for inversion. Taking Si(113)-(3*2), Sb/Si(111) - (root3*root3)R30 and Si(111) - (7*7) surfaces as examples, we show that high-quality 3D atomic images can be obtained, by direct Patterson inversion of LEED-I(E) curves. While for the holographic inversion of LEED-I(E) curves, shifts (>1A) in z-coordinates of the atomic images are observed. As to the in-elastically scattered electrons (Kikuchi pattern), it is the holographic process that contributes to the intensity modulation of I(E) curves of the diffraction patterns, thus the holographic inversion has to be adopted to obtain the atomic images. Applying the off-normal Kikuchi electron holography (KEH) the controversial Si(113)-(3*2) surface, the capability of KEH to solve an unknown surface structure is demonstrated. The inverted atomic images reveal the characteristics of the puckering tetramer Ranke's model. Structural phase transitions of hydrogen passivated Si(113) surfaces were also studied by KEH.

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