Abstract
In this reserach we fabricated the Cu-In-Al precursor by DC sputter using Cu-In-Al alloy target, then we selenized the precursor by Se powder source. During the selenization process we tried difference heating rate, selenization temperature,during time and amount of Se powder to obtained CIAS thin-film. From the XRD and SEM alaysis we realized that the best CIAS asorber layer can be obtained with background pressure of 5.8×10-7 torr and two-step selenization process,we used 300℃ 10mins for first step reflowing precess and the second step the temperature heating to 525℃ for 40mins. Finally, we fabricated CIAS solar cells with Al/AZO/i-ZnO/CdS/CIAS/Mo structure.The best results showed an efficiency 3.534% with open voltage of 0.46V, short circuit current of 26.09 mA/cm2 and fill factor of 0.29.