Abstract
By the help of blossom develop status of flexible eletronic devices, the solution-processed organic transistors now show its bigger application potential in low-cost roll-to-roll large-area mass produciton. This thesis mainly focus on space-charge-limited transistor (SCLT), a vertical organic transistor develpoed by our group. Though SCLT has good charateristics like high output current, high ON/OFF current ratio and relatively low operational voltage, but its performance is unstable due to the fabrication process. We use nano sphere as a evaporation mask. But accommodation effect may easily occur because of the random arrangement of sphere. It may produce larger hole, and causing larger leakage current. Nanoimprint lithography is promising at high yield and large-area fabrication potential. In this work, we cooperate with Dr. Lon A. Wang’s group to develop the well-regular-ordered metal mesh base-electrode. However, the performance of imprinted SCLT is limited by Al wet-etching process. The ion contamanation caused by wet-etching may induced leakage current. Lately we try to combine nanoimprint with lift-off method and successfully reduce the leakage current by a order. The ouput current of SCLT device reaches 4.64 mA/cm2 and the ON/OFF current ratio increases to more than 105. We believe that we can apply nanoimprint lithography on flexible substrate in the future. And better performance of SCLT would have be predicted.