Abstract
We utilized the Microwave plasma enhanced chemical vapor deposition (MPECVD) as a non-heating process to grow 3C-SiC thin film, contained good crystal quality. We introduced Dichlorodimethylsilane (DDS) and Tetramethylsilane (TMS) into hydrogen plasma as reactant gases. Furthermore we compared how chlorine-based and chlorine-free precursor affects the process and results. We could obtain SiC thin film with good crystallinity at 400 ℃ with <111> preferred orientation and columnar-like structure on the sidewall of the film using chlorine-based process. Whereas, chlorine-free process showed more carbon aggregates in the grain boundary and lower crystallinity at similar process window. We referred the differences to the etching effect of SiCl2 which is believed to enhance the selective growth and suppress the secondary nucleation. Eventually we tried to deposit 3C-SiC on glass substrate to demonstrate the low process temperature feature and thus it can be used for optoelectric applications.