Abstract
According to the prediction of Moore’s law, the number of components in integrated circuits double every two years. Performance betters with decreasing cost per chip for scaling down of device. It is accurate even for now. However, there are many new challenges when gate length scales from 0.18µm down to 10nm. One of the key issues is how to deal with the increasing impact of low frequency noise on scaled device. The low frequency noise, which received more and more attention in recent years, causes the unpredictable results in memory and RF circuits. On the other hand, low frequency noise is directed to unique applications, such as random number generator, artificial neural network, stochastic resonance, and temperature detector, etc. In this paper, we present a novel low frequency noise generator with voltage control modulation based on contact resistive random access memory (CRRAM), which has small area and full compatibility with advanced CMOS logic process. The 1/f noise and random telegraph noise(RTN) characteristics of CRRAM has been investigated for possible application as a noise generation source. An adjustable noise generator has been demonstrated to provide noise power at levels changed several decades for applications in stochastic neuromorphic computation.