Abstract
New p-type transparent conductive oxide materials, MoO3:In single crystal nanowires and amorphous films, were synthesized in this work. Both nanowires and amorphous films exhibit high optical transmittance, 80–88% for 80 nm thick films at 400–800 nm wavelength, and low resistivity (down to 5.98 × 10-4 Ω-cm) suitable for photovoltaic device applications. The amorphous films were also deposited on flexible polyimide substrates and exhibit excellent electrical properties even after bending. Besides, p-MoO3:In/i-ZnO/n-AZO devices were fabricated to demonstrate the potential for all-transparent flexible electronic applications. MoO3:In nanowires were also used as hole transport layers for solid-state dye-sensitized solar cells (SS-DSSCs). The MoO3:In nanowires were used to increase the surface contact with dyed titanium dioxide nanoparticles so as to enhance the short circuit current of SS-DSSCs. Various methods of solution-processing were also used to fill titanium dioxide nanoparticles in MoO3:In nanowires. Besides, indium doping in MoO3 nanowires was utilized to improve the hole concentration and enhance the open voltage of SS-DSSCs.