Abstract
AbstractThe TiO2 films for non-volatile memory applications were prepared on Pt bottom electrode by metal-organic chemical vapor deposition (MOCVD) method. The Pt top and bottom electrodes were made in symmetric metal-insulator-metal (MIM) structure. In order to investigate the relationships between TiO2 film structures and resistance switching behaviors, various temperatures of rapid thermal annealing under O2 and N2 atmosphere were performed. Additionally, according to the good characteristic of oxygen capture of Pt, the TiO2 films embedded with PtO thin layer was performed. The stability of high-resistance state (HRS) and low-resistance state (LRS) was dependent on the crystallinity and film composition of the TiO2 films. The results suggest that the electrical - induced resistance switching was dependent on the crystalline phases and oxygen vacancies in the TiO2 films, which affect the formation of filamentary path previously reported in binary transition metal oxide thin films exhibiting resistance switching characteristics.