Logo image
以標準0.18μm CMOS製程製作附有電流校正機制之12V-500μA神經刺激器
Thesis

以標準0.18μm CMOS製程製作附有電流校正機制之12V-500μA神經刺激器

陳謙之
Masters, 國立清華大學, 電機工程學系
2011

Abstract

功能性電刺激 神經刺激電路 生醫植入式裝置 Functional electrical stimulation neuron stimulator biomedical implantable device
Bio-medical implantable devices have drawn more and more attention in recent years. Functional electrical stimulation (FES) has high potential to partially repair or at least improve the physiological function of patients suffering from neuron damage. Stimulators for this purpose usually face two design challenges of the required high supply voltage for compliance voltage, and the residual charge which eventually causes electrode corrosion. Using a voltage limit technique, a stimulator which can withstand 12V supply voltage is proposed in this study. A current calibration mechanism is added to limit the amount of residual charge within a safe range. The simulator has been fabricated using TSMC 0.18μm technology. Experimental results show that stimulation current up to 500μA could be delivered, and the current mismatch is less than 0.57μA. The stimulator successfully generated a 60 Hz biphasic stimulation waveform, whose amplitude and pulse width was tunable.

Metrics

1 Record Views

Details

Logo image