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以標準CMOS製程實現1V輸入切換電容式升壓至3V到6V之神經刺激器
Thesis

以標準CMOS製程實現1V輸入切換電容式升壓至3V到6V之神經刺激器

柯聖安
Masters, 國立清華大學, 電機工程學系
2013

Abstract

功能性電刺激 生醫植入式裝置 神經刺激器 升壓電路 高電壓驅動器電路 functional electrical stimulation biomedical implantable device neuron stimulator voltage multiplier high voltage driver
Recent studies have shown that functional electrical stimulation can be used to treat neurological disorders, like cardiac dysrhythmia, sensorineural hearing loss, Parkinson's disease, and other diseases. A high voltage neuron stimulator is used in biomedical implantable devices. The chip size is considered to achieve an implantable device. High efficiency of the converter is also important to have long operating life. In this thesis, a neuron stimulator, which provides a functional electrical stimulation, consists of a voltage multiplier and a high voltage driver circuit. A novel hybrid architecture is proposed and analyzed with a mathematical model. The circuit supplies a wide range output voltage of high efficiency with the proposed switching stages circuit operation. The hybrid architecture allows the use of different types of on chip capacitor to minimize the chip area. The proposed circuit technique of parasitic auxiliary path improves the efficiency of the whole circuit. The voltage multiplier with 1V input can achieve 3V to 6V output voltage under the loading current from 30uA to 240uA using a standard 0.18um CMOS process technology. The measurement results demonstrate that the efficiency of the overall system reaches 48% to 58% over a wide range of output voltages. A constant voltage output circuit is transformed into a constant current output circuit. The simulation shows that the 60us pulse width and 120uA constant current functional electrical stimulation is provided by an integrated voltage multiplier and high voltage driver.

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