Abstract
In this work the capacitance-voltage (C-V), current-voltage (I-V) characteristics of metal-insulator-metal (MIM) and metal-ferroelectric-insulator-semiconductor (MFIS) capacitors were measured. The SBT films were successfully prepared on Pt/Ti/silicon dioxide/Si and tantalum oxide/Si substrates by radio-frequency (RF) sputtering methods. The memory window was observed in the C-V characteristics of the MFIS capacitors. The leakage current was dominated by Schottky emission. The temperature dependence of the leakage is studied. When the temperature increased from 25 ℃ to 75 ℃, the leakage current slightly decreased with temperature. However, when the temperature increased from 75 ℃ to 200 ℃, the leakage current increased with temperature.The leakage current density of the SBT films deposited on Pt/Ti/silicon dioxide/Si was about 2.38E-7 A/cm^2 at an applied field of 300 kV/cm at room temperature. The Schottky barrier heights were about 0.84-1.15 eV at the temperature of 25-200 ℃.