Abstract
This thesis is consisted of three parts, (1) Implantation of Cu seed layer on a-TaN/Si assembly using metal vapor vacuum arc ion implanter followed by electroless Cu plating, (2) Deposition of Cu films using 90o-bend filtered cathodic arc plasma system, and (3) Synthesis of CuO nanorods using 90o-bend filtered cathodic-arc for Cu deposition and vapor-solid reaction.Various implantation energies and dosages affect the grain size and orientation of the implanted Cu seed layer and the corresponding adhesion strength to the diffusion barrier layer, a-TaN, and gap-filling capability. As a result, electroless-plated Cu films exhibit a higher adhesion strength to a-TaN and an excellent gap-filling capability in 0.2-μm-width via under the accelerating voltage of 30 kV with dosage of 1 x 1017 cm-2.The orientation, adhesion strength and gap-filling capability of Cu films deposited by 90o-bend filtered cathodic arc plasma system are also discussed in this thesis. Stoichiometrically bicrystal CuO nanorods are synthesized by the combination of filtered cathodic-arc Cu deposition and vapor-solid reaction. CuO nanorods exhibit a lower turn-on field of 3.94 V/μm and a field-enhancement factor of ~3600, indicating that CuO nanorods are suitable for field emitters.