Abstract
Resistive random access memory(RRAM) is the hottest topic of nonvolatile memory studies. The advantages of RRAM are simple structure, fast switching speed, low voltage operation, easy for CMOS integration. There are many applications of RRAM like cross-bar array for high density of cells or integrated with logic cells with the structure of 1 transistor + 1 RRAM(1T1R). The cross-bar array is the excellent idea to accomplish high density of memory cells array. But sneak current from cross-bar array must be avoided. There are some ways to avoid sneak current are known as 1 Selection device + 1 RRAM(1S1R), 1 diode + 1 RRAM(1D1R) or complementary resistive switching memory. The schottky diode of 1D1R cross-bar array are chosen with high integrating power with RRAM and simple structure. Finally, the ZrTiOx(ZTO) were used to be dielectric and the structure of TaN/ZTO/Ni/N-Si could have 10% of read windows with 100 word line or bit line number. For simple structure TaN/ZTO/Ni/N-Si is potential for RRAM array.