Abstract
Compared with p-type crystalline silicon solar cells, n-type crystalline silicon solar cells can reach better performance because n-type solar cells do not suffer from light-induced degradation and have better tolerance of impurities. Some fabrication processes for n-type silicon solar cells are the same as those for p-type solar cells. Taking the process of anti-reflection layer deposition for example, both types of cells may use the PECVD technique for silicon nitride deposition at the front side. Pyramid formation through alkaline etching to trap light at the front surface is also the same process for both types. However, there are some processes for n-type solar cells that are different from those for p-type solar cells. In this paper, we form emitter by co-firing screen-printed aluminum at the rear side of an n-type crystalline silicon. First, by comparing the performance of different co-firing parameters, we find the best firing temperature in forming rear emitters. Then we use the same temperature for co-firing the cells with higher wafer resistivity. In the study, we also investigate the cell performance as a passivation layer of Al2¬O3 is formed at the rear side.