Abstract
Graphene, owing to its unique structural and outstanding properties, is regarded as one of the most important materials for future high performance devices and has been attracted lots of research groups all over the world. Until now, there are many ways to synthesize graphene for research purposes. However, there are no convinced and cost-efficient way for real industrial applications. In this regard, we successfully demonstrate a rapid fabrication of graphene on glass substrate by laser. The properties of low power consumption and fast growth that is highly compatible with real semiconductor manufacturing process. It can be also considered as a fast and dynamic growth process. The 808 nm near-infrared laser continuous wave laser is used to focus on glass substrate with a patterned nickel thin film (Ni TF) as metal catalyst. PMMA (or amorphous carbon) is deposited on top of the Ni TF as solid carbon source. As a result, few-layer graphene can be synthesized on both sides of Ni TF after the laser irradiation successfully. Microstructures were characterized by Raman spectroscopy and transmission electron microscopy (TEM). In addition, we propose a possible mechanism for this laser synthesis process on Ni. We believe this novel, fast and convenient way for graphene synthesis can have a significant contribution to future applications.