Abstract
In this work, we report the utilization of nano-diamond layer electrophoresis-deposited on Si to perform as a nucleation layer for growing ultra-nanocrystalline diamond (UNCD) film using microwave plasma-enhanced chemical vapor deposition (MPECVD) system. The morphology of the as-deposited diamond nanoparticles and UNCD films are studied by field emission scanning electron microscope (FESEM). Raman and electron field emission (EFE) studies reveal that the obtained UNCD films derived from electrophoresis possess the same performance as a nucleation layer obtained through the ultrasonication method. Moreover, we also demonstrate the growth of UNCD film onto Si nanowires (SiNWs) and tungsten carbide (WC) through the electrophoresis nucleation technique. Electrophoresis nucleation provides a better aligned SiNWs than ultrasonication technique. Enhanced EFE properties are also observed for UNCD nanoemitters on electrophoresis nucleated SiNWs. For the WC substrates, both ultrasonication and electrophoresis nucleations can promote the growth of UNCD films successfully. In addition, UNCD films on electrophoresis nucleated WC substrates also shows better EFE properties.