Abstract
Abstract An iron implanted CuInSe2 semiconductor thin film to process a ferromagnetic property and intermediate band structure by utilizing the ion implantation technique was studied in this work. From the measurements of the X-ray diffraction and the X-ray absorption spectra, the status of the implanted iron atoms in high dose implanted CuInSe2 thin films was similar to the pure iron bulk, and the ferromagnetic property was observed. Base on the results of the measurements of zero-field cooled and field cooled, the Curie temperature was above the room temperature (300 K), but the ferromagnetic property might come from the iron clusters in the films. At light dose of the CuInSe2 thin films, the room temperature ferromagnetic property was still exist, and the valence state of the implanted iron atoms was +2. The variation of the magnetic property at different doses was similar to the variations of concentration of the excess free carriers which cause also the optical band shifts. So, we consider that the magnetic property of the light dose implanted thin films should come from the intrinsic carrier mediated property. The additional absorption at the middle of the band gap energy was only observed at the high dose implanted thin films. We think that the concentration of the light dose implanted thin film isn’t high enough to create a new absorption band at the middle of band gap. How to create a new absorption band at the middle of band gap at light dose implanted thin films will be a very important subject for the future development.