Abstract
This paper is focus on the application of different materials and structures both for deep and vacuum ultraviolet lithographies. First, bi-layer bottom antireflective coating (BARC) structure composed of a commercial KrF lithography resists and an organic BARC film is demonstrated for ArF lithography. Such a bi-layer BARC can have large thickness control tolerances over various highly reflective substrates. The measured swing effect is found significantly reduced by adding such a bi-layer BARC on various highly reflectance substrates and reflectance can be reduced to less than 2 %. And such a process has other advantages: low contamination and easy film removal. The second, diluted low dielectric constant films are as BARC for KrF and ArF rigime. The measured swing effect is also found significantly reduced by adding diluted low k materials BARC on silicon and other different highly reflectance substrates. And the films are not need to remove. At the final, we also discuss the performance of low k materials like FLARE 、SiLK and BCB as BARC for F2 regime.