Abstract
A new structure of which can be use in bottom antireflective coating (BARC) layer of KrF and ArF photolithography is proposed. These antireflective layers, including benzocyclobutene (BCB), SILK and FLARE materials, are also the low dielectric constant film. By adding an optimized etching hard mask layer, the reflectance at resist / silicon substrate interface can be achieved to lower than 1 %. These films demonstrate the potential capability to be used as the BARC layer on highly reflectance substrates for metal interconnect application. Based on the properties of BARC and low dielectric constant, the process reliability of these materials can be ensured and the process competence can be promoted. In addition, other process characteristics such as etching durability, thermal stability, simulation, and physical and chemical behaviors of BCB, SILK and FLARE layers are also discussed.