Abstract
Novel LTPS PIN photo detectors with low dark current and high sensitivity have been developed. Dual gate insulator including TEOS and SiNx layer are employed to enhance hydrogen level which can effectively repair defects in the poly-Si thin film and in turn reduces dark current level in the PIN device. To increase photo responsibility, structural layer on top of the photo-detector is designed to reduce light loss. A hollow region is etched and filled with ITO to enhance light penetration to the depletion region. Bias voltage added to the ITO electrode is demonstrated to increase the depletion region of the device, which lead to better photo responsibility. By the above methods, we successfully develop a high performance PIN diode.