Abstract
In the last few years Low temperature polycrystalline silicon thin-film transistors, due to it's excellent device characteristics has been widely used in small-to-medium display panel. Recent years, Low temperature polycrystalline silicon thin-film transistors with high carrier mobilities allows for the realization of complementary circuit technology. As device miniaturized, panel aperture ratio, power consumption, the quality and resolution can be further improved. Integrating the driving circuits on the glass, so that the panel also has a narrow frame with higher imaging characteristics. Therefore, low-temperature polycrystalline silicon becomes the mainstream technology for small-to-medium size displays. The reliability of the panel between the performance of the system panel, peripheral drive circuit is critical to the LTPS technology, Long-term operation in the environment of high voltage or high current,can greatly affected the transistor’s stability. As the size of transistor is shrinking, devices will experience ever more severe hot carrier effects (Hot Carrier Effect), self-heating effects (Self-Heating Effect) leading to even worse reliability. This study investigates the degradation behavior of the low temperature polycrystalline silicon thin-film transistors when operate in AC pulse signal. Devices stressed under different temperature, frequency, Duty cycle resulting in different deteriorating characteristics are discussed and analyzed comprehensively.