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低漏電共軛高分子場效電晶體之研製
Thesis

低漏電共軛高分子場效電晶體之研製

吳孟穎
Masters, 國立清華大學, 電子工程研究所
2006

Abstract

有機薄膜電晶體 P3HT 載子遷移率 ON/OFF ratio organic thin film transistor P3HT mobility ON/OFF ratio
Organic light-emitting diodes (OLED) possess many advantages, such as faster response time, more broad of the visual angle, lower power consumption, higher contrast ratio and higher brightness. Among them, because of its flexibility, the developments of OLED and PLED are more and more important. The research of our laboratory is that using active matrix drive PLED, so improving the mobility of OTFT and reducing leakage current to improve on/off ratio is studied. Our insulator is APCVD/PECVD oxide. We make up the defect which grow up with oxide to reduce the gate leakage current by using polymer like PMMA (poly (methylmethacrylate )) and PVP (Polyvinylphenol ). Then we use N2 annealing and NH3 treatment to deal with the leakage current by P3HT doping. We also discuss the influence of HMDS and interface to the leakage current, and analyze the relationship between leakage current and the water/oxygen value in glove box, lighting, heating and vacuuming. Finally, we cover the active area to prevent water/oxygen by using passivation. Our best result is that sample mobility achieve 0.1cm2V-1s-1 order and the on/off ratio up to 104.

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