Abstract
Monoclinic gallium oxide (β-Ga2O3), due to its high thermal stability, good chemical stability, and a wide band gap of 4.9 eV, is a n-type semiconductor material for application as gas sensors, a transparent conducting oxide material and perhaps the next generation optoelectronic devices. In this work, to enhance its optoelectronic property, the thermal evaporation in a chemical vapor deposition (CVD) process and metal vapor vacuum arc (MeVVA) ion implantation, were applied to dope the specific elements to the Ga2O3 nanowires.Tin-doped gallium oxide (Sn-doped Ga2O3) nanostructures were also synthesized by the thermal evaporation in a CVD process and characterized. Different mixing ratio of the Sn dopant was tested to analyze the effect of doping Sn. Cathodoluminescene(CL) showed The pure Ga2O3 nanowires gave an emission 415 nm but showed a blue shift to 407 nm for the emission peak of the Sn-doped Ga2O3 nanowires. In the electrical measurement, after doping, the current increased from 10-2 to 10-1 μA. And the electrical property has a tendency to become an ohmic contact.The nanowires were also doped with copper(Cu) by a MeVVA system. The Cu concentration increased from 0.23 at% to 1.79 at% with increasing implant dosages from 5×1015 to 5×1016 atom/cm2. With the higher Cu concentration, we could find that the peak of CL red shifted to the longer wavelength. At the highest Cu concentration(1.79 at%), the emission peak of Cu-doped Ga2O3 nanowires is at 520 nm. In the electrical measurement, after the doping, the current increased sharply from 10-2 to 10 μA and the electrical property has a tendency to be an ohmic contact.