Abstract
Abstract In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.5um LDMOS process technology is described. In order to improve the reverse leakage current, we use the 3D simulation tools Silvaco to analyze the characteristics of SBD. The experimental results are given to confirm our analytic work. According to the measurement characteristics and device structure, we design the equivalent circuit of this work to describe the performance of this MPS Schottky Device.