Abstract
In this article, we use the Kane model, which is based on the k . p theory, to discuss the band structure of the lattice matched hetero-structure In 0.53 Ga 0.47 As / InP. We have calculated the energy levels of the InP / In 0.53 Ga 0.47 As / InP quantum wells, with different widths of the well and the heights of the barrier. We can find that the energy levels are lowered as the width of the well increases. The energy levels increase as the height of the barrier increases. Furthermore, the comparison of the inter-subband calculated in our work with selected data from the literature, the theoretical calculations agree well with experimental data. The discrete energy levels are broadened to form sub-bands in the In 0.53 Ga 0.47 As / InP super-lattice. Their widths decrease when the well-acting layer increases at a fixed barrier thickness, and when, at fixed the well-acting layer thickness LA, the barrier-acting layer thickness increase. The widths of sub-bands decrease as the carrier effective mass increases, to the part where the widths of the heavy hole sub-band in our sample are almost negligible for LA ≧ 30 A.