Abstract
Atomic layer deposition (ALD) is a kind of chemical vapor deposition (CVD) technique, it have conformal and high quality film can be deposited by ALD process and Zinc Oxide has high mobility and air-stable, Zinc Oxide layer can be prepared by ALD at low temperatures and in other research with the ALD-grown Zinc Oxide electron selective layer in flexible inverted Organic photovoltaic devices, a maximum PCE of 4.18%. In this work, we using solution process design inverted structure is ITO/ZnO/Blend/PEDOT:PSS/Ag, and using ALD- growth Zinc Oxide at ITO glass as electron selective layer and using novel donor material as active layer to achieved high efficiency inverted organic solar cells. The devices exhibit a PCE of 7.148% with optimum film thickness and annealing method.