Abstract
In this thesis, we use the laser system and isotropic wet-etching to construct honeycomb structure on crystalline silicon solar cell and we also investigate the surface passivation effect of NAOS/TEOS application .First, we can find the positive fixed charge of NAOS /TEOS film and the film quality enhanced with annealing temperature from C-V & FTIR. The passivation effect can be verified by lifetime measurement. According to the former standard process flow, we find our cells have the problem of the very high series resistance. After we optimum the annealing parameter, we improve the F.F. from 0.13 to 0.71. Finally, we take the application of NAOS/TEOS passivation on crystalline silicon solar cell. The final parameter are:Mono: Jsc=34.28mA/cm2, Voc=0.57V, F.F.=0.72, η=14.06%Multi: Jsc=30.34 mA/cm2,Voc=0.52V, F.F.=0.66, η=10.41%