Abstract
Abstract We propose a new method of solving the optical constants for Vacuum Ultraviolet lithography. We measure the reflectance of multi-angles incidence and then use the thin film model to solve the optical constants of materials. We discuss the optical characteristics of low-K and dielectric materials include Hydrogen silsesquioxane, Methylsesquioxane and silicon oxynitride films. And we vary the gas flow ratio to tune the optical constants of silicon oxynitride films. Then we apply the materials that analyzed to resist, bottom antireflective coating and attenuated phase shifting mask of Vacuum Ultraviolet lithography. The other point, we propose a new method that using SU-8 polymer to fabricate gray-scale mask. SU-8 polymer has smei-absorption property and usually used in semiconductor process. This method has many advantages than conventional method. So we discuss the optical property of epoxy based SU-8 polymer and application in gray-scale mask. In addition to SU-8, we add the Carbon Nanotube (CNT) in SU-8 to enhance the absorption because the absorption of SU-8 is too weak at 365 nm (I-line) or 436 nm (G-line) exposure wavelength. Then we discuss the optical property and application of SU-8 after adding CNT. We find that exposure dosage would affect the optical constants of SU-8+CNT.