Abstract
AbstractIn this thesis, we investigated the application of photo-sensitive lowdielectric passivation materials for thin-film-transistor (TFT) technology.photo-sensitive low dielectric passivation materials has the properties ofthe high transmittance (>90% at 300~800 nm), low photo leakage currentand good planarization for TFT passivation layer. In addition, it caneffectively increase the aperture ratio of display matrix and reduceresistance-capacitance delay (RC delay). More importantly, thephotosensitivity of material property makes to simplify process andreduce fabrication steps. Therefore, the application of the photo-sensitivelow dielectric passivation materials on TFT device has become one of themost important issue for flat panel display. In this study we haveinvestigated two of the promising candidates of photo-sensitive lowdielectric passivation materials for TFT array technology application.In TFT process, the effects of passivation layers on device electricalcharacteristics are the most important issue. In this study, the effects oftwo kinds photo-sensitive low dielectric passivation materials andconventional silicon nitride passivation layer on device electricalcharacteristics are discussed.In conclusion, we have found that the leakage of devices withphoto-sensitive low dielectric passivation is little changed by illumination.Otherwise, device performance exhibits also well in reliability. Thisindicates that photo-sensitive low dielectric passivation materials are themost possible candidate to replace the conventional SiNx passivationlayer on TFT device in the future.