Abstract
高性能砷化銦鎵/磷化銦檢光二極體在長波長光纖通信及量測上是一關鍵性元組件.本論文針對磊晶材料特性分析,元件的製作,量測,計算,及分析做深入的探討.利用液相磊晶(LPE)技術研製摻鉺離子砷化銦鎵檢光二極體,我們先對摻鉺離子砷化銦鎵磊晶層的成長及特性進行分析,然後根據其最佳條件來製作元件,並經由電特性與光特性及動態特性等測試以驗證元件特性.至於在平面結構砷化銦鎵檢光二極體,我們提出一個分佈式阻抗模型來對檢光二極體阻抗做計算,並將所得到的相關參數代到電阻-電感-電容電路模型(R-L-C Circuit Modeling)計算頻率響應,並和實際量測之頻率響應做比較.同時我們也利用有機金屬化學氣相磊晶(MOCVD)技術所研製出之平面元件進行可靠度方面的研究.在高速率檢光二極體方面,一製程簡單且良率又高又可在磷化銦半絕緣基板上製作出低電容平面檢光二極體已被證實,其3-dB頻寬超過14 GHz. 另外,我們成功的研製出1x12檢光二極體陣列,這些陣列元件在暗電流及光電響應度方面具有很好的性能及高均勻度.最後,我們也研製出平面結構砷化銦鎵/磷化銦累增崩潰檢光二極體(APD),並量測其元件特性,其增益頻寬乘積(GBW)可達10 GHz.High-performance InGaAs/InP photodiodes are vital componentsfor long-wavele-ngth optical fiber communications andmeasurements. This dissertation exploresin depth the materialcharacterization, device fabrication, measurement, calc-ulation,and analysis. For the Er-doped InGaAs PIN photodiodes grown byliquidphase epitaxial(LPE), the growth and characterization ofEr-doped InGaAs laye-rs, and fabrication and performance of Er-doped PIN photodiodes have been inv-estigated. For the planardevices, we have proposed a distributed impedance model anddiode impedance calculation, and RLC modeling on frequencyresponse.We also present the preliminary efforts on reliabilityof the fabricated grow-n by metal-organic chemical vapordeposition(MOCVD) devices. In respect of thehigh speed PINphotodiode, we have demonstrated a simple, high yield planar -process for fabricating low-capacitance InGaAs PIN diodes onsemi-insulating InP substrate withbandwidth exceeding 14 GHz.In addition, we have successfu-lly fabricated the uniform andhigh performance of monolithically integrated 1 x 12 array ofplanar InGaAs PIN photodiodes. These photodiode arrays have hi-ghly uniform characteristics and good performance in darkcurrents and photor-esponsivities. Lastly, the device of planarInGaAs/InP avalanche photodiodes have been fabricated andcharacterized. The gain-bandwidth products of 10 GHz wereobtained.