Abstract
The purpose of this thesis is to examine the characteristics of using different method in GaAs 808 nm laser diode. By utilizing Large Optical Cavity(LOC) within GaAs 808 nm laser diode structure, the active region can accommodate more photons and we expect to have higher output powers as the result. Besides, we also combine the other technology as building a Current Blocking Region near the facet mirror to low down the temperatures of the facet mirror to reach the better catastrophic optical damage level. The results show that threshold current have a perfectly positive relationship with the cavity length of the sample which have LOC design. And its threshold current densities also increase as the reciprocal cavity length increase which is identical to the basic laser theory. But the results focused on the relationship between the emitter width and threshold current densities show that due to the optical confinement factor won’t getting dramatically improvement with the wider emitter width sample, the trend of threshold current densities will getting slightly higher when increasing the emitter width of the laser diode. The last but not the least, we didn’t see a great influence of Current Blocking Region on samples with cavity length from 1.5 mm to 4 mm. It is believed that reason resulted from the width we designed for Current Blocking Region is too short compared to those cavity length. We only see the result that the Current Blocking Region effectively change the level of threshold current on samples with cavity length 1 mm and having a higher level of threshold current at wider Current Blocking Region.